Dip MazumdarGROWTH AND PHYSICAL PROPERTIES OF NOVEL ELECTRONIC AND SPINTRONIC MATERIALS
We are interested in the growth of new materials and investigate physical properties affected by size, chemical
doping, interface, heterostructure, and external tuning parameters (light, magnetic field, etc.). My talk consists of
three separate topics that have involved several graduate and undergraduate students in the past three years. The first-half will focus on chalcogen-based (S, Se) layered materials, namely, Transition metal dichalcogenides (TMD) and Topological insulators (TI). Since the discovery of graphene and other two-dimensional materials, TMDs have merged as one of the most exciting systems to investigate properties at the nanoscale. In our lab, we have developed few-layer large-area MoS2 thin-films using a PVD-CVD growth process that can produce films with tunable properties. I will discuss their structural, optical, electrical and optoelectronic properties. Next, I will discuss our work on the influence finite-size in Topological insulator Bi2Se3 thin-films. Through a combination of quantum confinement and Burstein-Moss effect, we discovered a large optical blue-shift in Bi2Se3 as it approaches the 2D limit. In the third part of my talk, I will present results on a theory-driven experimental search of new half-metallic materials that can be useful in emerging spintronics technologies such as spin-transfer torque random access memory. Several new and thermodynamically-stable half-metallic materials have been identified in the inverse-Heusler family (general formula X2YZ). Synthesis of such materials is underway both in bulk and thin-film form. I shall share some recent results on Manganese-based inverse-Heuslers.